MRF8P9040N: 728-960 MHz, 4.0 W Avg., 28 V CDMA, W-CDMA, LTE RF Power LDMOS Transistors
Key Parametrics
-
- Frequency (Min) (MHz)
- 728
-
- Frequency (Max) (MHz)
- 960
-
- Supply Voltage (Typ) (V)
- 28
-
- P1dB (Typ) (dBm)
- 46.2
-
- P1dB (Typ) (W)
- 42
-
- Output Power (Typ) (W) @ Intermodulation Level at Test Signal
- 4.0 @ AVG
-
- Test Signal
- WCDMA
-
- Power Gain (Typ) (dB) @ f (MHz)
- 19.1 @ 960
-
- Efficiency (Typ) (%)
- 19.9
-
- Thermal Resistance (Spec) (℃/W)
- 1.5
-
- Matching
- input impedance matching
-
- Class
- AB
-
- Die Technology
- LDMOS
.
RF Performance Tables
Driver Application — 900 MHz
Typical Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ = 320 mA, Pout = 4.0 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.| Frequency | Gps (dB) |
ηD (%) |
ACPR (dBc) |
| 920 MHz | 18.9 | 18.9 | –49.6 |
| 940 MHz | 19.1 | 19.5 | –50.1 |
| 960 MHz | 19.1 | 19.9 | –48.8 |
- Capable of Handling 10:1 VSWR, @ 32 Vdc, 940 MHz, 63 Watts CW Output Power (3 dB Input Overdrive from Rated Pout), Designed for Enhanced Ruggedness
- Typical Pout @ 1 dB Compression Point ≃ 42 Watts CW
Driver Application — 700 MHz
Typical Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ = 320 mA, Pout = 4.0 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.| Frequency | Gps (dB) |
ηD (%) |
ACPR (dBc) |
| 728 MHz | 19.9 | 18.7 | –49.9 |
| 748 MHz | 20.1 | 19.1 | –50.0 |
| 768 MHz | 20.0 | 19.5 | –49.9 |