Radio Frequency
RF Power
RF ISM and Broadcast
1-600 MHz – Broadcast and ISM
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MRFE6VP6300H

MRFE6VP6300H: 1.8-600 MHz, 300 W, 50 V Lateral N-Channel Broadband RF Power MOSFETs

Overview

The MRFE6VP6300HR3 and MRFE6VP6300HSR3 are high ruggedness devices, designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio/land mobile applications. They are unmatched input and output designs allowing wide frequency range utilization, between 1.8 and 600 MHz.

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Features

Unmatched Input and Output Allowing Wide Frequency Range Utilization
Device can be used Single-Ended or in a Push-Pull Configuration
Qualified Up to a Maximum of 50 V_DD Operation
Characterized from 30 V to 50 V for Extended Power Range
Suitable for Linear Application with Appropriate Biasing
Integrated ESD Protection
Greater Negative Gate-Source Voltage Range for Improved Class C Operation
Characterized with Series Equivalent Large-Signal Impedance Parameters
RoHS Compliant
NI-780-4 in Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width, 13 inch Reel.
NI-780S-4 in Tape and Reel. R3 Suffix = 250 Units, 32 mm Tape Width, 13 inch Reel.
These products are included in Our product longevity program with assured supply for a minimum of 15 years after launch.

MoreLess

Features

Unmatched Input and Output Allowing Wide Frequency Range Utilization
Device can be used Single-Ended or in a Push-Pull Configuration
Qualified Up to a Maximum of 50 V_DD Operation
Characterized from 30 V to 50 V for Extended Power Range
Suitable for Linear Application with Appropriate Biasing
Integrated ESD Protection
Greater Negative Gate-Source Voltage Range for Improved Class C Operation
Characterized with Series Equivalent Large-Signal Impedance Parameters
RoHS Compliant
NI-780-4 in Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width, 13 inch Reel.
NI-780S-4 in Tape and Reel. R3 Suffix = 250 Units, 32 mm Tape Width, 13 inch Reel.
These products are included in Our product longevity program with assured supply for a minimum of 15 years after launch.

Data Sheets

Buy

NI-780-4, NI-780S-4 Package Image

NI-780-4, NI-780S-4 Package Image

NI-780-4, NI-780S-4 Package Image

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Key Parametrics

Frequency (Min) (MHz)

1.8
Frequency (Max) (MHz)

600
Supply Voltage (Typ) (V)

50
P1dB (Typ) (dBm)

54.8
P1dB (Typ) (W)

300
Output Power (Typ) (W) @ Intermodulation Level at Test Signal

300.0 @ CW
Test Signal

1-TONE
Power Gain (Typ) (dB) @ f (MHz)

25.0 @ 130
Efficiency (Typ) (%)

80
Thermal Resistance (Spec) (℃/W)

0.19
Matching

unmatched
Class

AB
Die Technology

LDMOS

RF Performance Table

130, 230 MHz Broadband

Typical Performance: V_DD = 50 Volts, I_DQ = 100 mA

Signal Type	Pout (W)	f (MHz)	G_ps (dB)	η_D (%)	IRL (dB)
Pulse (100 µsec, 20% Duty Cycle)	300 Peak	230	26.5	74.0	–16
CW	300 Avg.	130	25.0	80.0	–15

Capable of Handling a Load Mismatch of 65:1 VSWR, @ 50 Vdc, 230 MHz, at all Phase Angles
- 300 Watts CW Output Power
- 300 Watts Pulse Peak Power, 20% Duty Cycle, 100 µsec
Capable of 300 Watts CW Operation