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Radio Frequency
RF Power
RF ISM and Broadcast
1-600 MHz – Broadcast and ISM
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MRF6V2150N

MRF6V2150N: 10-450 MHz, 150 W, 50 V Wideband RF Power LDMOS Transistors

Overview

The MRF6V2150NR1 and MRF6V2150NBR1 are designed primarily for CW large-signal output and driver applications with frequencies up to 450 MHz. Devices are unmatched and are suitable for use in industrial, medical and scientific applications.

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Features

Typical CW Performance at 220 MHz: V_DD = 50 Volts, I_DQ = 450 mA, Pout = 150 Watts
Power Gain: 25 dB

Drain Efficiency: 68.3%
Capable of Handling 10:1 VSWR, @ 50 Vdc, 220 MHz, 150 Watts Output Power
Characterized with Series Equivalent Large-Signal Impedance Parameters
Qualified Up to a Maximum of 50 V_DD Operation
Integrated ESD Protection
225°C Capable Plastic Package
RoHS Compliant
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.

NOTE: PARTS ARE SINGLE–ENDED

MoreLess

Features

Typical CW Performance at 220 MHz: V_DD = 50 Volts, I_DQ = 450 mA, Pout = 150 Watts
Power Gain: 25 dB

Drain Efficiency: 68.3%
Capable of Handling 10:1 VSWR, @ 50 Vdc, 220 MHz, 150 Watts Output Power
Characterized with Series Equivalent Large-Signal Impedance Parameters
Qualified Up to a Maximum of 50 V_DD Operation
Integrated ESD Protection
225°C Capable Plastic Package
RoHS Compliant
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.

NOTE: PARTS ARE SINGLE–ENDED

Data Sheets

Application Notes

TO-270WB-4, TO-272WB-4 Package Images

TO-270WB-4, TO-272WB-4 Package Images

TO-270WB-4, TO-272WB-4 Package Images

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Key Parametrics

Frequency (Min) (MHz)

10
Frequency (Max) (MHz)

450
Supply Voltage (Typ) (V)

50
P1dB (Typ) (dBm)

51.8
P1dB (Typ) (W)

150
Output Power (Typ) (W) @ Intermodulation Level at Test Signal

150.0 @ CW
Test Signal

1-TONE
Power Gain (Typ) (dB) @ f (MHz)

25.0 @ 220
Efficiency (Typ) (%)

68.3
Thermal Resistance (Spec) (℃/W)

0.24
Matching

unmatched
Class

AB
Die Technology

LDMOS