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MRF6V2150N
MRF6V2150N: 10-450 MHz, 150 W, 50 V Wideband RF Power LDMOS Transistors
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Overview
The MRF6V2150NR1 and MRF6V2150NBR1 are designed primarily for CW large-signal output and driver applications with frequencies up to 450 MHz. Devices are unmatched and are suitable for use in industrial, medical and scientific applications.
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Features
Typical CW Performance at 220 MHz: V
DD
= 50 Volts, I
DQ
= 450 mA, Pout = 150 Watts
Power Gain: 25 dB
Drain Efficiency: 68.3%
Capable of Handling 10:1 VSWR, @ 50 Vdc, 220 MHz, 150 Watts Output Power
Characterized with Series Equivalent Large-Signal Impedance Parameters
Qualified Up to a Maximum of 50 V
DD
Operation
Integrated ESD Protection
225°C Capable Plastic Package
RoHS Compliant
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
NOTE: PARTS ARE SINGLE–ENDED
More
Less
Features
Typical CW Performance at 220 MHz: V
DD
= 50 Volts, I
DQ
= 450 mA, Pout = 150 Watts
Power Gain: 25 dB
Drain Efficiency: 68.3%
Capable of Handling 10:1 VSWR, @ 50 Vdc, 220 MHz, 150 Watts Output Power
Characterized with Series Equivalent Large-Signal Impedance Parameters
Qualified Up to a Maximum of 50 V
DD
Operation
Integrated ESD Protection
225°C Capable Plastic Package
RoHS Compliant
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
NOTE: PARTS ARE SINGLE–ENDED
Data Sheets
Application Notes
TO-270WB-4, TO-272WB-4 Package Images
TO-270WB-4, TO-272WB-4 Package Images
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TO-270WB-4, TO-272WB-4 Package Images
Key Parametrics
Frequency (Min) (MHz)
10
Frequency (Max) (MHz)
450
Supply Voltage (Typ) (V)
50
P1dB (Typ) (dBm)
51.8
P1dB (Typ) (W)
150
Output Power (Typ) (W) @ Intermodulation Level at Test Signal
150.0 @ CW
Test Signal
1-TONE
Power Gain (Typ) (dB) @ f (MHz)
25.0 @ 220
Efficiency (Typ) (%)
68.3
Thermal Resistance (Spec) (℃/W)
0.24
Matching
unmatched
Class
AB
Die Technology
LDMOS
.