Radio Frequency
RF Power
RF ISM and Broadcast
1-600 MHz – Broadcast and ISM
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- MRFE6VS25L
- MRFE6VS25N
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- MRFX1K80N
- MRFX600H
MRF300AN

MRF300AN: 300 W CW over 1.8-250 MHz, 50 V Wideband RF Power LDMOS Transistor

Overview

These devices, MRF300AN and MRF300BN, are designed for use in HF and VHF communications, industrial, scientific and medical (ISM) and broadcast and aerospace applications. The devices are extremely rugged and exhibit high performance up to 250 MHz.

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Features

Mirror pinout versions (A and B) to simplify use in a push-pull, two-up configuration
Characterized from 30 to 50 V
Suitable for linear application
Integrated ESD protection with greater negative gate-source voltage range for improved Class C operation
Included in NXP product longevity program with assured supply for a minimum of 15 years after launch
RoHS compliant

Typical Applications

Industrial, Scientific, Medical (ISM)
- Laser generation
- Plasma etching
- Particle accelerators
- MRI and other medical applications
- Industrial heating, welding and drying systems
Radio and VHF TV broadcast
HF and VHF communications
Switch mode power supplies

MoreLess

Features

Mirror pinout versions (A and B) to simplify use in a push-pull, two-up configuration
Characterized from 30 to 50 V
Suitable for linear application
Integrated ESD protection with greater negative gate-source voltage range for improved Class C operation
Included in NXP product longevity program with assured supply for a minimum of 15 years after launch
RoHS compliant

Typical Applications

Industrial, Scientific, Medical (ISM)
- Laser generation
- Plasma etching
- Particle accelerators
- MRI and other medical applications
- Industrial heating, welding and drying systems
Radio and VHF TV broadcast
HF and VHF communications
Switch mode power supplies

Data Sheets

Application Notes

Buy

TO-247-3: MRF300AN and MRF300BN

MRF300AN Reference Circuits (same PCB)

Push-pull Configuration using MRF300AN and MRF300BN

Package Mounting Examples

Standard Packages for RF Power

TO-247-3: MRF300AN and MRF300BN
MRF300AN Reference Circuits (same PCB)
Push-pull Configuration using MRF300AN and MRF300BN
Package Mounting Examples
Standard Packages for RF Power

TO-247-3: MRF300AN and MRF300BN

MRF300AN Reference Circuits (same PCB)

Push-pull Configuration using MRF300AN and MRF300BN

Package Mounting Examples

Standard Packages for RF Power

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Key Parametrics

Frequency (Min) (MHz)

1.8
Frequency (Max) (MHz)

250
Supply Voltage (Typ) (V)

50
P1dB (Typ) (dBm)

54.8
P1dB (Typ) (W)

300
Test Signal

Pulse
Power Gain (Typ) (dB) @ f (MHz)

20.4 @ 230
Efficiency (Typ) (%)

75.5
Thermal Resistance (Spec) (℃/W)

0.55
Matching

unmatched
Class

AB
Die Technology

LDMOS

RF Performance Tables

Typical Performance

V_DD = 50 Vdc

Frequency (MHz)	Signal Type	P_out (W)	G_ps (dB)	η_D (%)
13.56	CW	320 CW	28.1	79.7
27		330 CW	27.4	80.0
40.68		330 CW	28.2	79.0
50		320 CW	27.3	73.0
81.36		325 CW	25.1	77.5
144		320 CW	23.0	73.0
230	Pulse (100 µsec, 20% Duty Cycle)	330 Peak	20.4	75.5

Load Mismatch/Ruggedness

Frequency (MHz)	Signal Type	VSWR	Pin (W)	Test Voltage	Result
40.68	Pulse (100 µsec, 20% Duty Cycle)	> 65:1 at all Phase Angles	2 Peak (3 dB Overdrive)	50	No Device Degradation
230	Pulse (100 µsec, 20% Duty Cycle)	> 65:1 at all Phase Angles	6 Peak (3 dB Overdrive)	50	No Device Degradation