MRF24G300HS: 300 W CW over 2400-2500 MHz, 50 V RF Power GaN Transistor

Overview

These 300 W CW GaN transistors, MRF24G300HS and MRF24G300H, are designed for industrial, scientific and medical (ISM) applications at 2450 MHz. These devices are suitable for use in CW, pulse, cycling and linear applications. These high gain, high efficiency devices are easy to use and will provide long life in even the most demanding environments.

These parts are characterized and performance is guaranteed for applications operating in the 2400 to 2500 MHz band. There is no guarantee of performance when these parts are used in applications designed outside of these frequencies.

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Features

Advanced GaN on SiC, for optimal thermal performance
Characterized for CW, long pulse (up to several seconds) and short pulse operations
Device can be used in a single-ended or push-pull configuration
Input matched for simplified input circuitry
Qualified up to 55 V
Suitable for linear application
RoHS Compliant

Target Applications

Industrial heating
Welding and heat sealing
Plasma generation
Lighting
Scientific instrumentation
Medical
- Microwave ablation
- Diathermy

MoreLess

Features

Advanced GaN on SiC, for optimal thermal performance
Characterized for CW, long pulse (up to several seconds) and short pulse operations
Device can be used in a single-ended or push-pull configuration
Input matched for simplified input circuitry
Qualified up to 55 V
Suitable for linear application
RoHS Compliant

Target Applications

Industrial heating
Welding and heat sealing
Plasma generation
Lighting
Scientific instrumentation
Medical
- Microwave ablation
- Diathermy

Data Sheets

Application Notes

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NI-780S-4L, NI-780H-4L Package Image

MRF25G300HS 2450 MHz Reference Circuit

NI-780S-4L, NI-780H-4L Package Image
MRF25G300HS 2450 MHz Reference Circuit

NI-780S-4L, NI-780H-4L Package Image

MRF25G300HS 2450 MHz Reference Circuit

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Key Parametrics

Frequency (Min) (MHz)

2400
Frequency (Max) (MHz)

2500
Supply Voltage (Typ) (V)

50
P1dB (Typ) (dBm)

54.8
P1dB (Typ) (W)

300
Test Signal

CW
Power Gain (Typ) (dB) @ f (MHz)

15.2 @ 2450
Efficiency (Typ) (%)

73
Thermal Resistance (Spec) (℃/W)

0.52
Matching

unmatched
Class

AB
Die Technology

GaN

RF Performance Tables

Typical Performance

In 2400-2500 MHz MRF24G300HS reference circuit, V_DD = 48 Vdc, V_GS(A+B) = –5 Vdc⁽¹⁾

Frequency (MHz)	Signal Type	P_in (W)	P_out (W)	G_ps (dB)	η_D (%)
2400	CW	10.0	336	15.3	70.4
2450		10.0	332	15.2	73.0
2500		10.0	307	14.9	74.4

1. All data measured in fixture with device soldered to heatsink.

Load Mismatch/Ruggedness

Frequency (MHz)	Signal Type	VSWR	P_in (W)	Test Voltage	Result
2450	Pulse (100 µsec, 20% Duty Cycle)	> 20:1 at All Phase Angles	12.6 Peak	55	No Device Degradation