A3T09S100N: 100 W CW over 136 to 941 MHz, 32 V Airfast® RF Power LDMOS Transistor

Overview

Features

TO-270-2 Package Image

TO-270-2 Package Image

Key Parametrics

  • Frequency (Min) (MHz)
    136
  • Frequency (Max) (MHz)
    941
  • Supply Voltage (Typ) (V)
    32
  • P1dB (Typ) (dBm)
    50
  • P1dB (Typ) (W)
    90
  • Output Power (Typ) (W) @ Intermodulation Level at Test Signal
    90.0 @ CW
  • Test Signal
    CW
  • Power Gain (Typ) (dB) @ f (MHz)
    22.8 @ 880
  • Efficiency (Typ) (%)
    33.8
  • Thermal Resistance (Spec) (℃/W)
    0.9
  • Matching
    unmatched
  • Class
    AB
  • Die Technology
    LDMOS
.

RF Performance Tables

Typical Single-Carrier W–CDMA Production Fixture Performance

VDD = 28 Vdc, IDQ = 450 mA, Pout = 15 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF
Frequency
(MHz)
Gps
(dB)
ηD
(%)
Avg. Pout
(W)
880 22.8 33.8 15

Typical Reference Circuit Performance

VDD = 28 Vdc, IDQ = 450 mA, Pin = 0.125 W, CW
Frequency
(MHz)
Gps
(dB)
ηD
(%)
Pout
(W)
136 28.5 64.0 90

Load Mismatch/Ruggedness

Frequency
(MHz)
Signal
Type
VSWR Pin
(W)
Test
Voltage
Result
880 CW > 10:1 at all Phase Angles 1.3 32 No Device Degradation
136 CW > 5:1 at all Phase Angles 0.2 32 No Device Degradation