AFT05MS004N: 136-941 MHz, 4 W, 7.5 V Wideband RF Power LDMOS Transistor
Key Parametrics
-
- Frequency (Min) (MHz)
- 136
-
- Frequency (Max) (MHz)
- 941
-
- Supply Voltage (Typ) (V)
- 7.5
-
- P1dB (Typ) (dBm)
- 36
-
- P1dB (Typ) (W)
- 4
-
- Output Power (Typ) (W) @ Intermodulation Level at Test Signal
- 4.9 @ CW
-
- Test Signal
- CW
-
- Power Gain (Typ) (dB) @ f (MHz)
- 20.9 @ 520
-
- Efficiency (Typ) (%)
- 74.9
-
- Thermal Resistance (Spec) (℃/W)
- 4.4
-
- Matching
- unmatched
-
- Class
- AB
-
- Die Technology
- LDMOS
.
RF Performance Tables
520 MHz Narrowband
(7.5 Vdc, TA = 25°C, CW)| Frequency (MHz) |
Gps (dB) |
ηD (%) |
Pout (W) |
| 520(1) | 20.9 | 74.9 | 4.9 |
VHF, UHF Performance
(7.5 Vdc, TA = 25°C, CW)| Frequency (MHz) |
Pin (W) |
Gps (dB) |
ηD (%) |
Pout (W) |
| 136-174(2) | 0.10 | 17.8 | 61.8 | 6.1 |
| 350-520(3) | 0.12 | 15.4 | 49.4 | 4.2 |
Load Mismatch/Ruggedness
| Frequency (MHz) |
Signal Type | VSWR | Pin (W) |
Test Voltage |
Result |
| 435(3) | CW | > 65:1 at all Phase Angles | 0.24 (3 dB Overdrive) | 9.0 | No Device Degradation |
2. Measured in 136-174 MHz VHF broadband reference circuit.
3. Measured in 350-520 MHz UHF broadband reference circuit.