AFIC901N: 30 dBm over 1.8-1000 MHz, 7.5 V Airfast^® Wideband Integrated RF LDMOS Amplifier

Overview

The AFIC901N is a 2-stage, high gain amplifier designed to provide a high level of flexibility to the amplifier designer. The device is unmatched even at the interstage, allowing performance to be optimized for any frequency in the 1.8 to 1000 MHz range. The high gain, ruggedness and wideband performance of this device make it ideal for use as a pre-driver and driver in a wide range of industrial, medical and communications applications.

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Features

Characterized for Operation from 1.8 to 1000 MHz
Unmatched Input, Interstage and Output Allowing Wide Frequency Range Utilization
Integrated ESD Protection
Same PCB Layout Can be Used for 136-174 MHz, 350-520 MHz and 760-870 MHz Designs.
24-pin, 4 mm QFN Plastic Package
RoHS Compliant
This product is included in our product longevity program with assured supply for a minimum of 15 years after launch.

Typical Applications

Driver for Mobile Radio Power Amplifiers
Output Stage for Low Power Handheld Radios
Driver for Communications and Industrial Systems

MoreLess

Features

Characterized for Operation from 1.8 to 1000 MHz
Unmatched Input, Interstage and Output Allowing Wide Frequency Range Utilization
Integrated ESD Protection
Same PCB Layout Can be Used for 136-174 MHz, 350-520 MHz and 760-870 MHz Designs.
24-pin, 4 mm QFN Plastic Package
RoHS Compliant
This product is included in our product longevity program with assured supply for a minimum of 15 years after launch.

Typical Applications

Driver for Mobile Radio Power Amplifiers
Output Stage for Low Power Handheld Radios
Driver for Communications and Industrial Systems

Data Sheets

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Sample

QFN 4 x 4, 24-Lead

QFN 4 x 4, 24-Lead

QFN 4 x 4, 24-Lead

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Key Parametrics

Frequency (Min) (MHz)

1.8
Frequency (Max) (MHz)

1000
Supply Voltage (Typ) (V)

7.5
P1dB (Typ) (dBm)

30
P1dB (Typ) (W)

1
Output Power (Typ) (W) @ Intermodulation Level at Test Signal

1.0 @ CW
Test Signal

CW
Power Gain (Typ) (dB) @ f (MHz)

31.2 @ 520
Efficiency (Typ) (%)

73
Thermal Resistance (Spec) (℃/W)

9.4
Matching

unmatched
Class

AB
Die Technology

LDMOS

RF Performance Tables

Typical Narrowband Performance

(7.5 Vdc, T_A = 25°C, CW)

Frequency (MHz)	G_ps (dB)	η_D (%)	Pout (dBm)
520⁽¹⁾	32.2	73.0	31.2

Typical Wideband Performance

(7.5 Vdc, T_A = 25°C, CW)

Frequency (MHz)	Pin (dBm)	G_ps (dB)	η_D (%)	Pout (dBm)
136-174^(2,5)	0	30.6	62.1	30.6
350-520^(3,5)	3	27.4	61.5	30.4
760-870^(4,5)	3	27.6	57.0	30.6

Load Mismatch/Ruggedness

Frequency (MHz)	Signal Type	VSWR	Pin (W)	Test Voltage	Result
175⁽²⁾	CW	> 25:1 at all Phase Angles	3 dB Overdrive from rated power	9	No Device Degradation
520⁽³⁾	CW	> 25:1 at all Phase Angles	3 dB Overdrive from rated power	9	No Device Degradation

1. Measured in 520 MHz narrowband test circuit.
2. Measured in 136-174 MHz VHF broadband reference circuit.
3. Measured in 350-520 MHz UHF broadband reference circuit.
4. Measured in 760-870 MHz broadband reference circuit.
5. The values shown are the center band performance numbers across the indicated frequency range.

AFIC901N: 30 dBm over 1.8-1000 MHz, 7.5 V Airfast® Wideband Integrated RF LDMOS Amplifier

Overview

Features

QFN 4 x 4, 24-Lead

QFN 4 x 4, 24-Lead

Key Parametrics

RF Performance Tables

Typical Narrowband Performance

Typical Wideband Performance

Load Mismatch/Ruggedness

AFIC901N: 30 dBm over 1.8-1000 MHz, 7.5 V Airfast^® Wideband Integrated RF LDMOS Amplifier