AFIC901N: 30 dBm over 1.8-1000 MHz, 7.5 V Airfast® Wideband Integrated RF LDMOS Amplifier

Overview

Features

QFN 4 x 4, 24-Lead

QFN 4 x 4, 24-Lead
  • QFN 4 x 4, 24-Lead
    QFN 4 x 4, 24-Lead

QFN 4 x 4, 24-Lead

QFN 4 x 4, 24-Lead

Key Parametrics

  • Frequency (Min) (MHz)
    1.8
  • Frequency (Max) (MHz)
    1000
  • Supply Voltage (Typ) (V)
    7.5
  • P1dB (Typ) (dBm)
    30
  • P1dB (Typ) (W)
    1
  • Output Power (Typ) (W) @ Intermodulation Level at Test Signal
    1.0 @ CW
  • Test Signal
    CW
  • Power Gain (Typ) (dB) @ f (MHz)
    31.2 @ 520
  • Efficiency (Typ) (%)
    73
  • Thermal Resistance (Spec) (℃/W)
    9.4
  • Matching
    unmatched
  • Class
    AB
  • Die Technology
    LDMOS
.

RF Performance Tables

Typical Narrowband Performance

(7.5 Vdc, TA = 25°C, CW)
Frequency
(MHz)		 Gps
(dB)		 ηD
(%)		 Pout
(dBm)
520(1)32.273.031.2

Typical Wideband Performance

(7.5 Vdc, TA = 25°C, CW)
Frequency
(MHz)		 Pin
(dBm)		 Gps
(dB)		 ηD
(%)		 Pout
(dBm)
136-174(2,5)030.662.130.6
350-520(3,5)327.461.530.4
760-870(4,5)327.657.030.6

Load Mismatch/Ruggedness

Frequency
(MHz)		 Signal Type VSWR Pin
(W)		 Test
Voltage		 Result
175(2)CW> 25:1 at all Phase Angles 3 dB Overdrive from rated power9 No Device Degradation
520(3)
1. Measured in 520 MHz narrowband test circuit.
2. Measured in 136-174 MHz VHF broadband reference circuit.
3. Measured in 350-520 MHz UHF broadband reference circuit.
4. Measured in 760-870 MHz broadband reference circuit.
5. The values shown are the center band performance numbers across the indicated frequency range.