3.5 GHz, 10 W, 12 V Power FET GaAs pHEMT

MRFG35010AR1
  • Not Recommended for New Designs
  • This page contains information on a product that is not recommended for new designs.

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Features

  • Typical Single–Carrier W–CDMA Performance: VDD = 12 Volts, IDQ = 140 mA, Pout = 1 Watt Avg., f = 3550 MHz, Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF.
    Power Gain: 10 dB
    Drain Efficiency: 25%
    ACPR @ 5 MHz Offset:  –43 dBc in 3.84 MHz Channel Bandwidth
  • 10 Watts P1dB @ 3550 MHz, CW
  • Excellent Phase Linearity and Group Delay Characteristics
  • High Gain, High Efficiency and High Linearity
  • RoHS Compliant
  • In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel.

Documentation

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3 documents

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