Product Description
GaAs Linear Power Transistors NXP GaAs power transistors are made using an InGaAs pHEMT epitaxial structure for superior RF efficiency and linearity and are designed for operation in base station infrastructure RF power amplifiers.
General Purpose Amplifiers Boosting audio with performance, clarity, and efficiency. Our general-purpose amplifiers (GPAs) balance gain, linearity, noise, and power consumption specifications to meet the industry's most demanding needs—including high-gain, small-signal applications in consumer, commercial, industrial, and military use cases.
Linear Amplifiers Energy efficiency for future designs. Our linear amplifier portfolio supports a wide range of applications: TD-SCDMA, W-CDMA, and LTE femtocell BTS for consumer/enterprise; SMART grid; mesh networking at 4.9 GHz; WiMAX; WLAN. Combining high-performance design with unique features and application-specific design tools, these solutions enable new designs while accelerating time-to-market.
Wideband Amplifiers (75 Ω) With a range of dB gains to choose from, our selection of 1 GHz wideband amplifiers offer ideal Monolithic Microwave Integrated Circuit (MMIC) solutions for high-linearity CATV line extenders and drop amplifiers.