NPN Wideband Silicon Germanium RF Transistor

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Product Details

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Features

  • 110 GHz fT silicon germanium technology
  • High maximum output third-order intercept point 32 dBm at 1.8 GHz
  • Low noise high linearity RF transistor

Target Applications

  • GPS
  • High linearity applications
  • Ka band oscillators DRO’s
  • LTE, cellular, UMTS
  • Medium output power applications
  • SDARS first stage LNA
  • Wi-Fi / WLAN / WiMAX
  • ZigBee

Part numbers include: BFU760F.

Documentation

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4 documents

Design Resources

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Design Files

2 design files

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