BFU630F: NPN wideband silicon RF transistor

Overview

NPN silicon microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.

Features

40 GHz f_T silicon technology
High maximum stable gain 26 dB at 1.8 GHz
Low noise high gain microwave transistor
Noise figure (NF) = 0.85 dB at 2.4 GHz

Target Applications

AMR
Analog/digital cordless applications
Bluetooth
FM radio
GPS
Ku band oscillators DRO’s
LNB
Low noise amplifiers for microwave communications systems
LTE, cellular, UMTS
Mobile TV
RKE
WLAN and CDMA applications
ZigBee

Features

40 GHz f_T silicon technology
High maximum stable gain 26 dB at 1.8 GHz
Low noise high gain microwave transistor
Noise figure (NF) = 0.85 dB at 2.4 GHz

Target Applications

AMR
Analog/digital cordless applications
Bluetooth
FM radio
GPS
Ku band oscillators DRO’s
LNB
Low noise amplifiers for microwave communications systems
LTE, cellular, UMTS
Mobile TV
RKE
WLAN and CDMA applications
ZigBee

sot343f_3d

sot343f_3d

sot343f_3d

Development Boards

OM7827 : RF Transistor Starter kit for NXP RF wideband transistors BFU6x0F and BFU7x0F thumbnail

OM7827: RF Transistor Starter kit for NXP RF wideband transistors BFU6x0F and BFU7x0F

Development Boards

OM7827 : RF Transistor Starter kit for NXP RF wideband transistors BFU6x0F and BFU7x0F thumbnail

OM7827: RF Transistor Starter kit for NXP RF wideband transistors BFU6x0F and BFU7x0F

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