MMRF1008H: 960-1215 MHz, 275 W, 50 V Pulse Lateral N-Channel RF Power MOSFETs

Overview

Features

NI-780H-2L, NI-780S-2L, NI-780GH-2L Package Image

NI-780H-2L, NI-780S-2L, NI-780GH-2L Package Image

Key Parametrics

  • Frequency (Min) (MHz)
    960
  • Frequency (Max) (MHz)
    1215
  • Supply Voltage (Typ) (V)
    50
  • P1dB (Typ) (dBm)
    54.4
  • P1dB (Typ) (W)
    275
  • Output Power (Typ) (W) @ Intermodulation Level at Test Signal
    275.0 @ Peak
  • Test Signal
    Pulse
  • Power Gain (Typ) (dB) @ f (MHz)
    20.3 @ 1030.0
  • Efficiency (Typ) (%)
    65.5
  • Thermal Resistance (Spec) (°C/W)
    0.08
  • Matching
    input and output impedance matching
  • Class
    AB
  • Die Technology
    LDMOS