MMRF1009H: 960-1215 MHz, 500 W, 50 V Pulse Lateral N-Channel RF Power MOSFETs

Overview

Features

NI-780H-2L, NI-780S-2L Package Image

NI-780H-2L, NI-780S-2L Package Image

Key Parametrics

  • Frequency (Min) (MHz)
    960
  • Frequency (Max) (MHz)
    1215
  • Supply Voltage (Typ) (V)
    50
  • P1dB (Typ) (dBm)
    57
  • P1dB (Typ) (W)
    500
  • Output Power (Typ) (W) @ Intermodulation Level at Test Signal
    500.0 @ Peak
  • Test Signal
    Pulse
  • Power Gain (Typ) (dB) @ f (MHz)
    19.7 @ 1030.0
  • Efficiency (Typ) (%)
    62
  • Thermal Resistance (Spec) (°C/W)
    0.044
  • Matching
    input and output impedance matching
  • Class
    AB
  • Die Technology
    LDMOS

RF Performance Table

Typical Pulse Performance

VDD = 50 Vdc, IDQ = 200 mA, Pulse Width = 128 µsec, Duty Cycle = 10%
Application Pout
(W)
f
(MHz)
Gps
(dB)
ηD
(%)
Narrowband500 Peak103019.762.0
Broadband500 Peak960-121518.557.0
  • Capable of Handling 10:1 VSWR, @ 50 Vdc, 1030 MHz, 500 W Peak Power