MMRF2006N: 1805-2170 MHz, 20 W CW, 28 V RF LDMOS Wideband Integrated Power Amplifier

Overview

Features

PQFN 8x8 Package Image

PQFN 8x8 Package Image

Key Parametrics

  • Frequency (Min) (MHz)
    1805
  • Frequency (Max) (MHz)
    2170
  • Supply Voltage (Typ) (V)
    28
  • P1dB (Typ) (dBm)
    43
  • P1dB (Typ) (W)
    20
  • Output Power (Typ) (W) @ Intermodulation Level at Test Signal
    2.4 @ AVG
  • Test Signal
    WCDMA
  • Power Gain (Typ) (dB) @ f (MHz)
    32.6 @ 2140.0
  • Efficiency (Typ) (%)
    17
  • Thermal Resistance (Spec) (°C/W)
    1.9
  • Matching
    input and output impedance matching
  • Class
    AB
  • Die Technology
    LDMOS

RF Performance Tables

Driver Application — 2100 MHz

Typical Single-Carrier W-CDMA Performance: VDD = 28 Vdc, IDQ1 = 40 mA, IDQ2 = 230 mA, Pout = 2.4 W Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.
Frequency Gps
(dB)
PAE
(%)
Output PAR
(dB)
ACPR
(dBc)
2110 MHz32.616.87.7–51.3
2140 MHz32.617.07.6–51.4
2170 MHz32.417.07.5–51.6
  • Capable of Handling 10:1 VSWR @ 32 Vdc, 2140 MHz, Pout = 33 W CW (3 dB Input Overdrive from Rated Pout)
  • Typical Pout @ 1 dB Compression Point 20 W CW

Driver Application — 1800 MHz

Typical Single-Carrier W-CDMA Performance: VDD = 28 Vdc, IDQ1 = 40 mA, IDQ2 = 230 mA, Pout = 2.4 W Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.
Frequency Gps
(dB)
PAE
(%)
Output PAR
(dB)
ACPR
(dBc)
1805 MHz31.817.47.6–51.2
1840 MHz31.817.47.7–50.2
1880 MHz31.817.47.7–51.0