MMRF1020-04N: 720-960 MHz, 100 W Avg., 48 V RF Power LDMOS Transistors

Overview

Features

OM-780-4L, OM-780G-4L Package Image

OM-780-4L, OM-780G-4L Package Image

Key Parametrics

  • Frequency (Min) (MHz)
    720
  • Frequency (Max) (MHz)
    960
  • Supply Voltage (Typ) (V)
    48
  • P1dB (Typ) (dBm)
    53
  • P1dB (Typ) (W)
    200
  • Output Power (Typ) (W) @ Intermodulation Level at Test Signal
    100.0 @ AVG
  • Test Signal
    WCDMA
  • Power Gain (Typ) (dB) @ f (MHz)
    19.5 @ 920.0
  • Efficiency (Typ) (%)
    48.5
  • Thermal Resistance (Spec) (°C/W)
    0.45
  • Matching
    input impedance matching
  • Class
    AB
  • Die Technology
    LDMOS

RF Performance Table

900 MHz

Typical Doherty Single-Carrier W-CDMA Performance: VDD = 48 Vdc, IDQA = 860 mA, VGSB = 0.9 Vdc, Pout = 100 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
Frequency Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
920 MHz19.548.57.2–29.2
940 MHz19.549.57.1–32.0
960 MHz19.248.07.0–35.7