MMRF1005H: 1300 MHz, 250 W, 50 V Lateral N-Channel RF Power MOSFETs

Overview

Features

NI-780H-2L, NI-780S-2L Package Image

NI-780H-2L, NI-780S-2L Package Image

Key Parametrics

  • Frequency (Min) (MHz)
    1200
  • Frequency (Max) (MHz)
    1400
  • Supply Voltage (Typ) (V)
    50
  • P1dB (Typ) (dBm)
    54
  • P1dB (Typ) (W)
    250
  • Output Power (Typ) (W) @ Intermodulation Level at Test Signal
    250.0 @ Peak
  • Test Signal
    Pulse
  • Power Gain (Typ) (dB) @ f (MHz)
    22.7 @ 1300.0
  • Efficiency (Typ) (%)
    57
  • Thermal Resistance (Spec) (°C/W)
    0.07
  • Matching
    input impedance matching
  • Class
    AB
  • Die Technology
    LDMOS

RF Performance Tables

Typical Pulse Performance

VDD = 50 Vdc, IDQ = 100 mA
Signal Type Pout
(W)
f
(MHz)
Gps
(dB)
ηD
(%)
IRL
(dB)
Pulse (200 µsec,
10% Duty Cycle)
250 Peak130022.757.0–18
  • Capable of Handling a Load Mismatch of 10:1 VSWR, @ 50 Vdc, 1300 MHz at all Phase Angles, 250 W Pulse Peak Power, 10% Duty Cycle, 200 µsec

Typical CW Performance

VDD = 50 Vdc, IDQ = 10 mA, TC = 61°C
Signal Type Pout
(W)
f
(MHz)
Gps
(dB)
ηD
(%)
IRL
(dB)
CW 230 CW130020.053.0–25