MRFE6VP100H: 1.8-2000 MHz, 100 W, 50 V Broadband RF Power LDMOS Transistors

Overview

Features

NI-780-4, NI-780S-4 Package Image

NI-780-4, NI-780S-4 Package Image

Key Parametrics

  • Frequency (Min) (MHz)
    1.8
  • Frequency (Max) (MHz)
    2000
  • Supply Voltage (Typ) (V)
    50
  • P1dB (Typ) (dBm)
    50
  • P1dB (Typ) (W)
    100
  • Output Power (Typ) (W) @ Intermodulation Level at Test Signal
    100.0 @ CW
  • Test Signal
    1-TONE
  • Power Gain (Typ) (dB) @ f (MHz)
    27.2 @ 512.0
  • Efficiency (Typ) (%)
    70
  • Thermal Resistance (Spec) (°C/W)
    0.38
  • Matching
    unmatched
  • Class
    AB
  • Die Technology
    LDMOS

RF Performance Tables

30-512 MHz Broadband

VDD = 50 Volts
Frequency
(MHz)
Signal Type Pout
(W)
Gps
(dB)
ηD
(%)
IMD
(dBc)
30 to 512Two-Tone
(100 kHz spacing)
100 PEP19.030.0–30

512 MHz Narrowband

VDD = 50 Volts
Frequency
(MHz)
Signal Type Pout
(W)
Gps
(dB)
ηD
(%)
512CW10027.270.0
512Pulse (200 µsec,
20% Duty Cycle)
100 Peak26.070.0

Ruggedness, 512 MHz

Frequency
(MHz)
Signal Type VSWR Pout
(W)
Test
Voltage
Result
512Pulse
(100 µsec,
20% Duty Cycle)
>65:1
at all Phase
Angles
130
(3 dB
Overdrive)
50No
Device
Degradation
512CW126
(3 dB
Overdrive)