MRFE6VP61K25N: 1.8-600 MHz, 1250 W CW, 50 V Wideband RF Power LDMOS Transistors

Overview

Features

OM-1230-4L, OM-1230G-4L Package Image

OM-1230-4L, OM-1230G-4L Package Image

Key Parametrics

  • Frequency (Min) (MHz)
    1.8
  • Frequency (Max) (MHz)
    600
  • Supply Voltage (Typ) (V)
    50
  • P1dB (Typ) (dBm)
    61
  • P1dB (Typ) (W)
    1250
  • Output Power (Typ) (W) @ Intermodulation Level at Test Signal
    1250.0 @ Peak
  • Test Signal
    Pulse
  • Power Gain (Typ) (dB) @ f (MHz)
    23.0 @ 230.0
  • Efficiency (Typ) (%)
    72.3
  • Thermal Resistance (Spec) (°C/W)
    0.06
  • Matching
    unmatched
  • Class
    AB
  • Die Technology
    LDMOS

RF Performance Tables

Typical Performance

VDD = 50 Vdc
Frequency
(MHz)
Signal Type Pout
(W)
Gps
(dB)
ηD
(%)
87.5-108(1,2)CW1309 CW24.177.6
230(3)Pulse
(100 µsec, 20% Duty Cycle)
1250 Peak23.072.3

Load Mismatch/Ruggedness

Frequency
(MHz)
Signal Type VSWR Pin
(W)
Test
Voltage
Result
230(3) Pulse
(100 µsec,
20% Duty Cycle)
> 65:1 at all
Phase Angles
11.5 Peak
(3 dB Overdrive)
50 No Device
Degradation
1. Measured in 87.5-108 MHz broadband reference circuit.
2. The values shown are the center band performance numbers across the indicated frequency range.
3. Measured in 230 MHz narrowband test circuit.