MRFE6VP5150N: 1.8-600 MHz, 150 W CW, 50 V Wideband RF Power LDMOS Transistors

Overview

Features

TO-270WB-4, TO-270WBG-4 Gull Package Images

TO-270WB-4, TO-270WBG-4 Gull Package Images

Key Parametrics

  • Frequency (Min) (MHz)
    1.8
  • Frequency (Max) (MHz)
    600
  • Supply Voltage (Typ) (V)
    50
  • P1dB (Typ) (dBm)
    51.8
  • P1dB (Typ) (W)
    150
  • Output Power (Typ) (W) @ Intermodulation Level at Test Signal
    150.0 @ CW
  • Test Signal
    CW
  • Power Gain (Typ) (dB) @ f (MHz)
    26.3 @ 230.0
  • Efficiency (Typ) (%)
    72
  • Thermal Resistance (Spec) (°C/W)
    0.21
  • Matching
    unmatched
  • Class
    AB
  • Die Technology
    LDMOS

Performance Tables

87.5-108 MHz Broadband

VDD = 50 Vdc
Frequency
(MHz)
Signal Type Pout
(W)
Gps
(dB)
ηD
(%)
87.5-108(1,3)CW17922.574.6

230 MHz Narrowband

VDD = 50 Vdc
Frequency
(MHz)
Signal Type Pout
(W)
Gps
(dB)
ηD
(%)
230(2)CW15026.372.0
230(2)Pulse (100 µsec,
20% Duty Cycle)
150 Peak26.170.3

Ruggedness

Frequency
(MHz)
Signal Type VSWR Pin
(W)
Test
Voltage
Result
98(1)CW> 65:1
at all Phase
Angles
3.0
(3 dB
Overdrive)
50No
Device
Degradation
230(2)Pulse
(100 µsec,
20% Duty Cycle)
0.62 Peak
(3 dB
Overdrive)
1. Measured in 87.5-108 MHz broadband reference circuit.
2. Measured in 230 MHz narrowband test circuit.
3. The values shown are the minimum measured performance numbers across the indicated frequency range.