MRF1K50H: 1500 W CW over 1.8-500 MHz, 50 V Wideband RF Power LDMOS Transistor

Overview

Features

MRF1K50H: Reference Circuits

MRF1K50H: Reference Circuits

MRF1K50H: NI-1230H-4S Package Image

MRF1K50H: NI-1230H-4S Package Image

Key Parametrics

  • Frequency (Min) (MHz)
    1.8
  • Frequency (Max) (MHz)
    500
  • Supply Voltage (Typ) (V)
    50
  • P1dB (Typ) (dBm)
    61.8
  • P1dB (Typ) (W)
    1500
  • Output Power (Typ) (W) @ Intermodulation Level at Test Signal
    1500.0 @ Peak
  • Test Signal
    Pulse
  • Power Gain (Typ) (dB) @ f (MHz)
    23.7 @ 230.0
  • Efficiency (Typ) (%)
    74
  • Thermal Resistance (Spec) (°C/W)
    0.12
  • Matching
    unmatched
  • Class
    AB
  • Die Technology
    LDMOS

RF Performance Table

Typical Performance

VDD = 50 Vdc
Frequency
(MHz)
Signal Type Pout
(W)
Gps
(dB)
ηD
(%)
27CW1550 CW25.978.3
81.36(1)CW1400 CW23.075.0
87.5-108(2,3)CW1475 CW23.383.4
230(4)Pulse
(100 µsec, 20% Duty Cycle)
1500 Peak23.774.0
1. Data from 81.36 MHz narrowband reference circuit.
2. Data from 87.5-108 MHz broadband reference circuit.
3. The values shown are the center band performance numbers across the indicated frequency range.
4. Data from 230 MHz narrowband production test fixture.

What's New

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