MRFE6VP8600H: 470-860 MHz, 600 W, 50 V Broadband RF Power LDMOS Transistors

Overview

Features

NI-1230H-4S, NI-1230S-4S Product Images

NI-1230H-4S, NI-1230S-4S Product Images

Key Parametrics

  • Frequency (Min) (MHz)
    470
  • Frequency (Max) (MHz)
    860
  • Supply Voltage (Typ) (V)
    50
  • P1dB (Typ) (dBm)
    57.8
  • P1dB (Typ) (W)
    600
  • Output Power (Typ) (W) @ Intermodulation Level at Test Signal
    125.0 @ AVG
  • Test Signal
    OFDM
  • Power Gain (Typ) (dB) @ f (MHz)
    19.3 @ 860.0
  • Efficiency (Typ) (%)
    30
  • Thermal Resistance (Spec) (°C/W)
    0.19
  • Matching
    input impedance matching
  • Class
    AB
  • Die Technology
    LDMOS

RF Performance Tables

Narrowband Performance

Typical Narrowband Performance: VDD = 50 Volts, IDQ = 1400 mA, Channel Bandwidth = 8 MHz, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF. ACPR measured in 7.61 MHz Signal Bandwidth @ ±4 MHz Offset with an Integration Bandwidth of 4 kHz.
Signal Type Pout
(W)
f
(MHz)
Gps
(dB)
ηD
(%)
ACPR
(dBc)
IRL
(dB)
DVB-T (8k OFDM) 125 Avg.86019.330.0–65.5–12

Pulse Broadband Performance

Typical Pulse Broadband Performance: VDD = 50 Volts, IDQ = 1400 mA, Pulse Width = 100 µsec, Duty Cycle = 10%
Signal Type Pout
(W)
f
(MHz)
Gps
(dB)
ηD
(%)
Pulse 600 Peak47019.347.1
65020.053.1
86018.848.9