MRF6V3090N: 470-1215 MHz, 90 W, 50 V Broadband RF Power LDMOS Transistors

Overview

Features

TO-270WB-4, TO-272WB-4 Package Images

TO-270WB-4, TO-272WB-4 Package Images

Key Parametrics

  • Frequency (Min) (MHz)
    470
  • Frequency (Max) (MHz)
    1215
  • Supply Voltage (Typ) (V)
    50
  • P1dB (Typ) (dBm)
    49.5
  • P1dB (Typ) (W)
    90
  • Output Power (Typ) (W) @ Intermodulation Level at Test Signal
    18.0 @ AVG
  • Test Signal
    OFDM
  • Power Gain (Typ) (dB) @ f (MHz)
    22.0 @ 860.0
  • Efficiency (Typ) (%)
    28.5
  • Thermal Resistance (Spec) (°C/W)
    0.79
  • Matching
    input impedance matching
  • Class
    AB
  • Die Technology
    LDMOS

RF Performance Tables

470-860 MHz

Typical Performance (UHF 470-860 Reference Circuit): VDD = 50 Volts, IDQ = 450 mA, 64 QAM, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF.
Signal Type Pout
(W)
f
(MHz)
Gps
(dB)
ηD
(%)
Output Signal PAR
(dB)
IMD Shoulder
(dBc)
DVB-T (8k OFDM)18 Avg. 47021.626.88.6–31.8
65022.928.08.7–34.4
86021.928.37.9–29.2

960-1215 MHz

Typical Performance (L-band 960-1215 MHz Reference Circuit):
VDD = 50 Volts, IDQ = 100 mA.
Signal Type Pout
(W)
f
(MHz)
Pin
(W)
Gps
(dB)
ηD
(%)
Pulse (128 µsec,
10% Duty Cycle)
90 Peak 9601.318.455.3
10301.411856.9
10901.6517.450.7
12151.6817.351.0