MRFX Design Challenge

Show your RF mastery using NXP's new 65 V MRFX series!

NXP is hosting an RF power amplifier design contest. Applicants will record a video of their power amplifier/demo using NXP's new 65 V LDMOS 1800 W RF Power transistor, MRFX1K80H. The contest is open to students, professional engineers, companies or individuals.

Judging Criteria

Criteria Points
Creativity of the demo 30
Performance of the design* 25
Quality of the RF design 20
Number of video views by January 19, 2018 15
Quality of the video 10
Total 100
* Performance is not judged strictly on power. Will be judged on gain, bandwidth, efficiency, reliability and power. The demo does not necessarily have to run at 65 V, lower voltages are acceptable as well.

How to Enter the Competition

  1. Read the Official Rules of the contest and for clarifying details read the FAQs.
  2. NXP offers one MRFX1K80H sample at no cost if a description of the project is provided via this form sent by email and approved by NXP: 100-word summary minimum, along with a PDF or image showing a detailed block diagram or high-level schematic of the design. More samples can be purchased from NXP distributors.
  3. Assemble your design and record a video (3-5 minutes in length), showcasing a unique application that shows the performance of NXP RF transistors.
  4. Upload your video to any video website, YouTube, YouKu, etc. Add "NXP MRFX1K80H" in the video keywords.
  5. Once your video is uploaded, submit the URL to your video by emailing it to rfindustrial@nxp.com before Friday, January 26, 2018.
  6. The 3 winners selected will be announced on February 12, 2018.

See Official Rules (PDF) for details.

The contest is not open to NXP employees or NXP distributors.