880 MHz, 70 W, 26 V Single N-CDMA Lateral N-Channel Broadband RF Power MOSFET

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The MRF5S9070NR1 is designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device make it ideal for large–signal, common–source amplifier applications in 26 volt base station equipment.

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3 documents

^{Data Sheet}
MRF5S9070NR1, 880 MHz, 70 W, 26 V Single N-CDMA Lateral N-Channel Broadband RF Power MOSFETs

PDFRev 7Jun 19, 2009561.3 KBMRF5S9070NR1English
^{Application Note}
Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages

PDFRev 0Mar 12, 2009449.7 KBAN3789English
^{Package Information}
98ASH98117A, TO, 9.65x6.1x2.03, Pitch 6.06, 3 Pins

PDFRev RFeb 26, 201691.2 KBSOT1732-1English

880 MHz, 70 W, 26 V Single N-CDMA Lateral N-Channel Broadband RF Power MOSFET

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MRF5S9070NR1, 880 MHz, 70 W, 26 V Single N-CDMA Lateral N-Channel Broadband RF Power MOSFETs

Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages

98ASH98117A, TO, 9.65x6.1x2.03, Pitch 6.06, 3 Pins

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