MHT1003N: 2450 MHz, 250 W CW, 32 V RF LDMOS Transistor for Consumer and Commercial Cooking

Overview

Features

OM-780-2 Package Image

OM-780-2 Package Image

Key Parametrics

  • Frequency (Min) (MHz)
    2450
  • Frequency (Max) (MHz)
    2450
  • Supply Voltage (Typ) (V)
    32
  • P1dB (Typ) (dBm)
    54.2
  • P1dB (Typ) (W)
    263
  • Output Power (Typ) (W) @ Intermodulation Level at Test Signal
    250.0 @ CW
  • Test Signal
    1-TONE
  • Power Gain (Typ) (dB) @ f (MHz)
    15.9 @ 2450.0
  • Efficiency (Typ) (%)
    59
  • Thermal Resistance (Spec) (°C/W)
    0.26
  • Matching
    input and output impedance matching
  • Class
    AB
  • Die Technology
    LDMOS

RF Performance Tables

Typical Performance

VDD = 32 Vdc, IDQ = 25 mA
Frequency
(MHz)
Signal Type Gps
(dB)
PAE
(%)
Pout
(W)
2400CW15.057.0250
245015.959.0250
250014.955.0250

Load Mismatch/Ruggedness

Frequency
(MHz)
Signal Type VSWR Pin
(W)
Test
Voltage
Result
2450CW> 10:1
at all Phase
Angles
14
(3 dB
Overdrive)
32No
Device
Degradation