MHT1004N: 2450 MHz, 300 W CW, 32 V RF LDMOS Transistor for Consumer and Commercial Cooking

Overview

Features

OM-780-2L, OM-780G-2L Package Images

OM-780-2L, OM-780G-2L Package Images

Key Parametrics

  • Frequency (Min) (MHz)
    2450
  • Frequency (Max) (MHz)
    2450
  • Supply Voltage (Typ) (V)
    32
  • P1dB (Typ) (dBm)
    54.5
  • P1dB (Typ) (W)
    280
  • Output Power (Typ) (W) @ Intermodulation Level at Test Signal
    300.0 @ CW
  • Test Signal
    CW
  • Power Gain (Typ) (dB) @ f (MHz)
    15.2 @ 2450.0
  • Efficiency (Typ) (%)
    57.9
  • Thermal Resistance (Spec) (°C/W)
    0.24
  • Matching
    unmatched
  • Class
    AB
  • Die Technology
    LDMOS

RF Performance Tables

Typical Performance

VDD = 32 Vdc, IDQ = 100 mA
Frequency
(MHz)
Signal Type Gps
(dB)
PAE
(%)
Pout
(W)
2450CW15.257.9300

Load Mismatch/Ruggedness

Frequency
(MHz)
Signal Type VSWR Pin
(W)
Test
Voltage
Result
2450CW> 5:1
at all Phase Angles
15.0
(2 dB Overdrive)
32No Device Degradation