AFT05MS031N: 136-520 MHz, 31 W, 13.6 V Wideband RF Power LDMOS Transistors

Overview

Features

TO-270-2, TO-270G-2 Package Image

TO-270-2, TO-270G-2 Package Image

Key Parametrics

  • Frequency (Min) (MHz)
    1.8
  • Frequency (Max) (MHz)
    520
  • P1dB (Typ) (dBm)
    44.9
  • P1dB (Typ) (W)
    31
  • Output Power (Typ) (W) @ Intermodulation Level at Test Signal
    31.0 @ 1-Tone
  • Test Signal
    1-TONE
  • Power Gain (Typ) (dB) @ f (MHz)
    17.7 @ 520.0
  • Efficiency (Typ) (%)
    71
  • Thermal Resistance (Spec) (°C/W)
    0.67
  • Matching
    unmatched
  • Class
    AB
  • Die Technology
    LDMOS

RF Performance Tables

VHF, 136-174 MHz

13.6 Vdc, TA = 25°C, CW
Frequency
(MHz)
Gps
(dB)
ηD
(%)
P1dB
(W)
136-17423.262.031

UHF, 380-520 MHz

13.6 Vdc, TA = 25°C, CW
Frequency
(MHz)
Gps
(dB)
ηD
(%)
P1dB
(W)
380-45018.364.131

520 MHz Narrowband

13.6 Vdc, TA = 25°C, CW
Frequency
(MHz)
Gps
(dB)
ηD
(%)
P1dB
(W)
450-52017.762.031
52017.771.433

Ruggedness, 520 MHz

Frequency
(MHz)
Signal Type VSWR Pin
(W)
Test
Voltage
Result
520CW>65:1
at all Phase
Angles
1.1
(3 dB
Overdrive)
17No
Device
Degradation