AFT09MS015N: 136-941 MHz, 16 W, 12.5 V Wideband RF Power LDMOS Transistor

Overview

Features

PLD-1.5W Package Image

PLD-1.5W Package Image

Key Parametrics

  • Frequency (Min) (MHz)
    136
  • Frequency (Max) (MHz)
    941
  • Supply Voltage (Typ) (V)
    12.5
  • P1dB (Typ) (dBm)
    42
  • P1dB (Typ) (W)
    16
  • Output Power (Typ) (W) @ Intermodulation Level at Test Signal
    16.0 @ CW
  • Test Signal
    CW
  • Power Gain (Typ) (dB) @ f (MHz)
    17.2 @ 870.0
  • Efficiency (Typ) (%)
    77
  • Thermal Resistance (Spec) (°C/W)
    1
  • Matching
    unmatched
  • Class
    AB
  • Die Technology
    LDMOS

RF Performance Tables

Narrowband Performance

(12.5 Vdc, IDQ = 100 mA, TA = 25°C, CW)
Frequency
(MHz)
Gps
(dB)
ηD
(%)
Pout
(W)
870(1)17.277.016

Wideband Performance

(12.5 Vdc, TA = 25°C, CW)
Frequency
(MHz)
Pin
(W)
Gps
(dB)
ηD
(%)
Pout
(W)
136-1740.3816.060.015
350-4700.2318.560.016
760-870(2)0.3216.852.315

Ruggedness, 870 MHz

Frequency
(MHz)
Signal Type VSWR Pin
(W)
Test
Voltage
Result
870(1)CW> 65:1
at all Phase
Angles
0.5
(3 dB
Overdrive)
17No
Device
Degradation
1. Measured in 870 MHz narrowband test circuit.
2. Measured in 760-870 MHz UHF broadband reference circuit.