AFT05MS004N: 136-941 MHz, 4 W, 7.5 V Wideband RF Power LDMOS Transistor

Overview

Features

SOT-89A Package Image

SOT-89A Package Image

Key Parametrics

  • Frequency (Min) (MHz)
    136
  • Frequency (Max) (MHz)
    941
  • P1dB (Typ) (dBm)
    36
  • P1dB (Typ) (W)
    4
  • Output Power (Typ) (W) @ Intermodulation Level at Test Signal
    4.9 @ CW
  • Test Signal
    CW
  • Power Gain (Typ) (dB) @ f (MHz)
    20.9 @ 520.0
  • Efficiency (Typ) (%)
    74.9
  • Thermal Resistance (Spec) (°C/W)
    4.4
  • Matching
    unmatched
  • Class
    AB
  • Die Technology
    LDMOS

RF Performance Tables

520 MHz Narrowband

(7.5 Vdc, TA = 25°C, CW)
Frequency
(MHz)
Gps
(dB)
ηD
(%)
Pout
(W)
520(1)20.974.94.9

VHF, UHF Performance

(7.5 Vdc, TA = 25°C, CW)
Frequency
(MHz)
Pin
(W)
Gps
(dB)
ηD
(%)
Pout
(W)
136-174(2)0.1017.861.86.1
350-520(3)0.1215.449.44.2

Load Mismatch/Ruggedness

Frequency
(MHz)
Signal Type VSWR Pin
(W)
Test
Voltage
Result
435(3)CW> 65:1
at all Phase
Angles
0.24
(3 dB
Overdrive)
9.0No
Device
Degradation
1. Measured in 520 MHz narrowband test circuit.
2. Measured in 136-174 MHz VHF broadband reference circuit.
3. Measured in 350-520 MHz UHF broadband reference circuit.