AFT09MS031N: 764-941 MHz, 31 W, 13.6 V Wideband RF Power LDMOS Transistors

Overview

Features

TO-270-2, TO-270G-2 Package Image

TO-270-2, TO-270G-2 Package Image

Key Parametrics

  • Frequency (Min) (MHz)
    1.8
  • Frequency (Max) (MHz)
    941
  • Supply Voltage (Typ) (V)
    13.6
  • P1dB (Typ) (dBm)
    44.9
  • P1dB (Typ) (W)
    31
  • Output Power (Typ) (W) @ Intermodulation Level at Test Signal
    31.0 @ 1-Tone
  • Test Signal
    1-TONE
  • Power Gain (Typ) (dB) @ f (MHz)
    17.2 @ 870.0
  • Efficiency (Typ) (%)
    71
  • Thermal Resistance (Spec) (°C/W)
    0.63
  • Matching
    unmatched
  • Class
    AB
  • Die Technology
    LDMOS

RF Performance Tables

764-941 MHz Narrowband

13.6 Vdc, IDQ = 500 mA, TA = 25°C, CW
Frequency
(MHz)
Gps
(dB)
ηD
(%)
P1dB
(W)
76418.074.132
87017.271.031
94115.768.131

764-870 MHz Broadband

13.6 Vdc, IDQ = 100 mA, TA = 25°C, CW
Frequency
(MHz)
Gps
(dB)
ηD
(%)
P1dB
(W)
76015.762.044
82015.763.037
87015.561.036

Ruggedness, 870 MHz

Frequency
(MHz)
Signal Type VSWR Pin
(W)
Test
Voltage
Result
870(1)CW>65:1
at all Phase
Angles
1.2
(3 dB
Overdrive)
17No
Device
Degradation
870(2)2.0
(3 dB
Overdrive)
1. Measured in 870 MHz narrowband test circuit.
2. Measured in 760-870 MHz broadband reference circuit.

Reference Circuits