AFT09MP055N: 764-941 MHz, 55 W, 12.5 V Broadband RF Power LDMOS Transistors

Overview

Features

TO-270 WB-4, TO-270 WB-4 Gull Package Image

TO-270 WB-4, TO-270 WB-4 Gull Package Image

Key Parametrics

  • Frequency (Min) (MHz)
    764
  • Frequency (Max) (MHz)
    941
  • Supply Voltage (Typ) (V)
    12.5
  • P1dB (Typ) (dBm)
    47.6
  • P1dB (Typ) (W)
    57
  • Output Power (Typ) (W) @ Intermodulation Level at Test Signal
    57.0 @ 1-Tone
  • Test Signal
    1-TONE
  • Power Gain (Typ) (dB) @ f (MHz)
    17.5 @ 870.0
  • Efficiency (Typ) (%)
    69
  • Thermal Resistance (Spec) (°C/W)
    0.32
  • Matching
    input impedance matching
  • Class
    AB
  • Die Technology
    LDMOS

RF Performance Tables

870 MHz Narrowband

(In NXP Test Circuit: 12.5 Vdc, IDQ(A+B) = 550 mA, TA = 25°C, CW)
Frequency
(MHz)
Gps
(dB)
ηD
(%)
Pout
(W)
87017.569.057

800 MHz Broadband Performance

(In NXP Reference Circuit: 12.5 Vdc, IDQ(A+B) = 800 mA, Pin = 1.5 W, TA = 25°C, CW)
Frequency
(MHz)
Gps
(dB)
ηD
(%)
Pout
(W)
76416.156.061
81615.858.057
87015.761.056

Ruggedness, 870 MHz

Frequency
(MHz)
Signal Type VSWR Pin
(W)
Test
Voltage
Result
870CW>65:1
at all Phase
Angles
3
(3 dB
Overdrive)
17No
Device
Degradation