AFV10700H: 700 W Pulse over 1030-1090 MHz, 52 V Airfast® RF Power LDMOS Transistor

Overview

Features

AFV10700H 1030-1090 MHz Reference Circuit

AFV10700H 1030-1090 MHz Reference Circuit

NI-780H-4L, NI-780S-4L, NI-780GS-4L

NI-780H-4L, NI-780S-4L, NI-780GS-4L

Key Parametrics

  • Frequency (Min) (MHz)
    1030
  • Frequency (Max) (MHz)
    1090
  • Supply Voltage (Typ) (V)
    52
  • P1dB (Typ) (dBm)
    58.5
  • P1dB (Typ) (W)
    700
  • Output Power (Typ) (W) @ Intermodulation Level at Test Signal
    700.0 @ Peak
  • Test Signal
    Pulse
  • Power Gain (Typ) (dB) @ f (MHz)
    19.2 @ 1030
  • Efficiency (Typ) (%)
    58.5
  • Thermal Resistance (Spec) (℃/W)
    0.03
  • Matching
    input and output impedance matching
  • Class
    AB
  • Die Technology
    LDMOS

RF Performance Tables

Typical Performance

In 1030-1090 MHz reference circuit, IDQ(A+B) = 100 mA
Frequency
(MHz) (1)
Signal Type VDD
(V)
Pout
(W)
Gps
(dB)
ηD
(%)
1030Pulse
(128 µsec, 10% Duty Cycle)
50800 Peak17.552.1
1090700 Peak19.056.1
103052850 Peak17.551.7
1090770 Peak19.256.1

Typical Performance

In 1030 MHz narrowband production test fixture, IDQ(A+B) = 100 mA
Frequency
(MHz)
Signal Type VDD
(V)
Pout
(W)
Gps
(dB)
ηD
(%)
1030 (2)Pulse
(128 µsec, 10% Duty Cycle)
50730 Peak19.258.5

Narrowband Load Mismatch/Ruggedness

Frequency
(MHz)
Signal Type VSWR Pin
(W)
Test
Voltage
Result
1030 (2)Pulse
(128 µsec, 10% Duty Cycle)
> 20:1 at all Phase Angles17.2 Peak
(3 dB Overdrive)
50No Device Degradation
1. Measured in 1030-1090 MHz reference circuit.
2. Measured in 1030 MHz narrowband production test fixture.

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