MMRF1312H: 900-1215 MHz, 1000 W Peak, 52 V Airfast® RF Power LDMOS Transistors

Overview

Features

NI-1230H-4S, NI-1230S-4S, NI-1230GS-4L Package Image

NI-1230H-4S, NI-1230S-4S,  NI-1230GS-4L Package Image

Key Parametrics

  • Frequency (Min) (MHz)
    900
  • Frequency (Max) (MHz)
    1215
  • Supply Voltage (Typ) (V)
    52
  • P1dB (Typ) (dBm)
    60
  • P1dB (Typ) (W)
    1000
  • Output Power (Typ) (W) @ Intermodulation Level at Test Signal
    1200.0 @ Peak
  • Test Signal
    Pulse
  • Power Gain (Typ) (dB) @ f (MHz)
    17.3 @ 960
  • Efficiency (Typ) (%)
    54
  • Thermal Resistance (Spec) (℃/W)
    0.017
  • Matching
    input and output impedance matching
  • Class
    AB
  • Die Technology
    LDMOS
.

RF Performance Tables

Typical Short Pulse Performance

In 900-1215 MHz reference circuit, VDD = 52 Vdc, IDQ(A+B) = 100 mA
Frequency
(MHz)
Signal Type Pout
(W)
Gps
(dB)
ηD
(%)
900Pulse
(128 µsec, 10% Duty Cycle)
1615 Peak15.254.0
9601560 Peak17.355.7
10301500 Peak17.853.8
10901530 Peak18.054.5
12151200 Peak19.258.5

Load Mismatch/Ruggedness

Frequency
(MHz)
Signal Type VSWR Pin
(W)
Test
Voltage
Result
1030(1)Pulse
(128 µsec, 10% Duty Cycle)
> 20:1 at all Phase Angles20.2 Peak
(3 dB Overdrive)
52No Device Degradation
1. Measured in 1030 MHz narrowband reference circuit.