MMRF5017HS: 30-2200 MHz, 125 W CW, 50 V RF Power GaN Transistor

Overview

Features

NI-400S-2S Package Image

NI-400S-2S Package Image

Key Parametrics

  • Frequency (Min) (MHz)
    30
  • Frequency (Max) (MHz)
    2200
  • Supply Voltage (Typ) (V)
    50
  • P1dB (Typ) (dBm)
    51
  • P1dB (Typ) (W)
    125
  • Output Power (Typ) (W) @ Intermodulation Level at Test Signal
    125.0 @ CW
  • Test Signal
    CW
  • Power Gain (Typ) (dB) @ f (MHz)
    18.0 @ 520
  • Efficiency (Typ) (%)
    59.1
  • Thermal Resistance (Spec) (℃/W)
    1.3
  • Matching
    input impedance matching
  • Class
    AB
  • Die Technology
    GaN
.

RF Performance Tables

Typical Performance

VDD = 50 Vdc, TA = 25°C
Frequency
(MHz)
Signal Type Pout
(W)
Gps
(dB)
ηD
(%)
30-940 (1,2)CW9016.045.0
520 (1)CW12518.059.1
940 (1)CW8018.444.0
2200Pulse
(100 µsec, 20% Duty Cycle)
20017.057.0

Load Mismatch/Ruggedness

Frequency
(MHz)
Signal Type VSWR Pin
(W)
Test
Voltage
Result
520 (1) Pulse
(100 µsec, 20% Duty Cycle)
> 10:1 at All Phase Angles 3.4
(3 dB Overdrive)
50 No Device Degradation
1. Measured in 30-940 MHz wideband reference circuit.
2. The values shown are the minimum measured efficiency performance numbers across the indicated frequency range.