MMRF1018N: 470-860 MHz, 90 W, 50 V Broadband RF Power LDMOS Transistors

Overview

Features

TO-270WB/272WB-4 Package Image

TO-270WB/272WB-4 Package Image

Key Parametrics

  • Frequency (Min) (MHz)
    470
  • Frequency (Max) (MHz)
    860
  • Supply Voltage (Typ) (V)
    50
  • P1dB (Typ) (dBm)
    49.5
  • P1dB (Typ) (W)
    90
  • Output Power (Typ) (W) @ Intermodulation Level at Test Signal
    18.0 @ AVG
  • Test Signal
    OFDM
  • Power Gain (Typ) (dB) @ f (MHz)
    22.0 @ 860
  • Efficiency (Typ) (%)
    28.5
  • Thermal Resistance (Spec) (℃/W)
    0.79
  • Matching
    input impedance matching
  • Class
    AB
  • Die Technology
    LDMOS
.

RF Performance Tables

860 MHz Narrowband

Typical Performance (Narrowband Test Circuit): VDD = 50 Vdc, IDQ = 350 mA, 64 QAM, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF.

470-860 MHz Broadband

Typical Performance (Broadband Reference Circuit): VDD = 50 Vdc, IDQ = 450 mA, 64 QAM, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF.