MMRF1304L: 1.8-2000 MHz, 25 W, 50 V Wideband RF Power LDMOS Transistor

Overview

Features

NI-360H-2L Package

NI-360H-2L Package

Key Parametrics

  • Frequency (Min) (MHz)
    1.8
  • Frequency (Max) (MHz)
    2000
  • Supply Voltage (Typ) (V)
    50
  • P1dB (Typ) (dBm)
    44
  • P1dB (Typ) (W)
    25
  • Output Power (Typ) (W) @ Intermodulation Level at Test Signal
    25.0 @ Peak
  • Test Signal
    Pulse
  • Power Gain (Typ) (dB) @ f (MHz)
    25.9 @ 512
  • Efficiency (Typ) (%)
    74
  • Thermal Resistance (Spec) (℃/W)
    1.4
  • Matching
    unmatched
  • Class
    AB
  • Die Technology
    LDMOS
.

RF Performance Tables

HF, 1.8-30 MHz

VDD = 50 Vdc

30-512 MHz Broadband

VDD = 50 Vdc

512 MHz Narrowband

VDD = 50 Vdc

Ruggedness

1. Measured in 1.8-30 MHz broadband reference circuit.
2. Measured in 30-512 MHz broadband reference circuit.
3. The values shown are the minimum measured performance numbers across the indicated frequency range.
4. Measured in 512 MHz narrowband test circuit.