MMRF1306H: 1.8-600 MHz, 1250 W CW, 50 V Wideband RF Power LDMOS Transistors

Overview

Features

NI-1230H-4S, NI-1230S-4S Package Image

NI-1230H-4S, NI-1230S-4S Package Image

Key Parametrics

  • Frequency (Min) (MHz)
    1.8
  • Frequency (Max) (MHz)
    600
  • Supply Voltage (Typ) (V)
    50
  • P1dB (Typ) (dBm)
    61
  • P1dB (Typ) (W)
    1250
  • Output Power (Typ) (W) @ Intermodulation Level at Test Signal
    1250.0 @ CW
  • Test Signal
    1-TONE
  • Power Gain (Typ) (dB) @ f (MHz)
    22.9 @ 230
  • Efficiency (Typ) (%)
    74.6
  • Thermal Resistance (Spec) (℃/W)
    0.15
  • Matching
    unmatched
  • Class
    AB
  • Die Technology
    LDMOS
.

RF Performance Tables

Typical Performance

VDD = 50 Vdc, IDQ = 100 mA

Application Circuits — Typical Performance

Load Mismatch/Ruggedness