MMRF1316N: 1.8-600 MHz, 300 W CW, 50 V Wideband RF Power LDMOS Transistor

Overview

Features

TO-270WB-4 Package Image

TO-270WB-4 Package Image

Key Parametrics

  • Frequency (Min) (MHz)
    1.8
  • Frequency (Max) (MHz)
    600
  • Supply Voltage (Typ) (V)
    50
  • P1dB (Typ) (dBm)
    54.8
  • P1dB (Typ) (W)
    300
  • Output Power (Typ) (W) @ Intermodulation Level at Test Signal
    300.0 @ CW
  • Test Signal
    CW
  • Power Gain (Typ) (dB) @ f (MHz)
    25.0 @ 230
  • Efficiency (Typ) (%)
    70
  • Thermal Resistance (Spec) (℃/W)
    0.22
  • Matching
    unmatched
  • Class
    AB
  • Die Technology
    LDMOS
.

RF Performance Tables

87.5-108 MHz Broadband

VDD = 50 Vdc

230 MHz Narrowband

VDD = 50 Vdc

Ruggedness

1. Measured in 87.5-108 MHz broadband reference circuit.
2. Measured in 230 MHz narrowband test circuit.
3. The values shown are the minimum measured performance numbers across the indicated frequency range.