AFV141KH: 1000 W Peak over 1200-1400 MHz, 50 V RF Power LDMOS Transistor

Overview

Features

NI-1230H-4S, NI-1230S-4S, NI-1230GS-4L Package Image

NI-1230H-4S, NI-1230S-4S,  NI-1230GS-4L Package Image

Key Parametrics

  • Frequency (Min) (MHz)
    1200
  • Frequency (Max) (MHz)
    1400
  • Supply Voltage (Typ) (V)
    50
  • P1dB (Typ) (dBm)
    60
  • P1dB (Typ) (W)
    1000
  • Output Power (Typ) (W) @ Intermodulation Level at Test Signal
    1000.0 @ Peak
  • Test Signal
    Pulse
  • Power Gain (Typ) (dB) @ f (MHz)
    17.7 @ 1400
  • Efficiency (Typ) (%)
    52.1
  • Thermal Resistance (Spec) (℃/W)
    0.018000001
  • Matching
    unmatched
  • Class
    AB
  • Die Technology
    LDMOS
.

RF Performance Tables

Typical Pulse Performance

In 1200-1400 MHz reference circuit, VDD = 50 Vdc, IDQ(A+B) = 100 mA, Pin = 25 W
Frequency
(MHz)
Signal Type Pout
(W)
Gps
(dB)
ηD
(%)
1200Pulse
(300 µsec, 12% Duty Cycle)
950 Peak15.846.5
13001120 Peak16.547.5
14001000 Peak16.146.6

Load Mismatch/Ruggedness

Frequency
(MHz)
Signal Type VSWR Pin
(W)
Test
Voltage
Result
1400(1)Pulse
(128 µsec, 10% Duty Cycle)
> 20:1 at all Phase Angles31.6 Peak
(3 dB Overdrive)
50No Device Degradation
1. Measured in 1400 MHz narrowband production circuit.