MRF6V10010N: 1090 MHz, 10 W, 50 V Pulsed Lateral N-Channel RF Power MOSFET

Overview

Features

PLD 1.5 Package Image

PLD 1.5 Package Image

Key Parametrics

  • Frequency (Min) (MHz)
    960
  • Frequency (Max) (MHz)
    1400
  • Supply Voltage (Typ) (V)
    50
  • P1dB (Typ) (dBm)
    40
  • P1dB (Typ) (W)
    10
  • Output Power (Typ) (W) @ Intermodulation Level at Test Signal
    10.0 @ Peak
  • Test Signal
    Pulse
  • Power Gain (Typ) (dB) @ f (MHz)
    25.0 @ 1090
  • Efficiency (Typ) (%)
    69
  • Thermal Resistance (Spec) (℃/W)
    1.6
  • Matching
    input and output impedance matching
  • Class
    AB
  • Die Technology
    LDMOS
.