AFT31150N: 150 W Pulse over 2700-3100 MHz, 32 V Airfast® RF Power LDMOS Transistor

Overview

Features

OM-780-2L Package Image

OM-780-2L Package Image

Key Parametrics

  • Frequency (Min) (MHz)
    2700
  • Frequency (Max) (MHz)
    3100
  • Supply Voltage (Typ) (V)
    32
  • P1dB (Typ) (dBm)
    51.8
  • P1dB (Typ) (W)
    150
  • Output Power (Typ) (W) @ Intermodulation Level at Test Signal
    150.0 @ Peak
  • Test Signal
    Pulse
  • Power Gain (Typ) (dB) @ f (MHz)
    17.0 @ 3100
  • Efficiency (Typ) (%)
    50
  • Thermal Resistance (Spec) (℃/W)
    0.042
  • Matching
    input and output impedance matching
  • Class
    AB
  • Die Technology
    LDMOS
.

RF Performance Tables

Typical Performance

In 2700-3100 MHz reference circuit, VDD = 32 Vdc
Frequency
(MHz)
Signal Type Pout
(W)
Gps
(dB)
ηD
(%)
IRL
(dB)
2700-3100(1)Pulse (300 µsec,
15% Duty Cycle)
150 Peak17.249.0–6

Load Mismatch/Ruggedness

Frequency
(MHz)
Signal Type VSWR Pin
(W)
Test
Voltage
Result
3100(2)Pulse (300 µsec,
15% Duty Cycle)
10:1
at all Phase Angles
6.8 Peak
(3 dB Overdrive)
32No Device Degradation
1. The values shown are the center band performance numbers across the indicated frequency range.
2. Measured in 3100 MHz narrowband production test fixture.