150 W Pulse over 2700-3100 MHz, 32 V Airfast® RF Power LDMOS Transistor

AFT31150N
  • Not Recommended for New Designs
  • This page contains information on a product that is not recommended for new designs.

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Product Details

Features

  • Characterized with series equivalent large-signal impedance parameters
  • Internally matched for ease of use
  • Qualified up to a maximum of 32 VDD operation
  • Integrated ESD protection
  • Greater negative gate-source voltage range for improved Class C operation
  • Recommended driver: AFIC31025N (25 W)
  • RoHS Compliant
  • Commercial S-Band radar systems
  • Maritime radar
  • Weather radar

Part numbers include: AFT31150N.

Key Parametrics

  • Frequency (Min) (MHz)
    2700
  • Frequency (Max) (MHz)
    3100
  • Supply Voltage (Typ) (V)
    32
  • P1dB (Typ) (dBm)
    51.8
  • P1dB (Typ) (W)
    150
  • Die Technology
    LDMOS

RF Performance Tables

Typical Performance

In 2700-3100 MHz reference circuit, VDD = 32 Vdc
Frequency
(MHz)
Signal Type Pout
(W)
Gps
(dB)
ηD
(%)
IRL
(dB)
2700-3100(1)Pulse (300 µsec,
15% Duty Cycle)
150 Peak17.249.0–6

Load Mismatch/Ruggedness

Frequency
(MHz)
Signal Type VSWR Pin
(W)
Test
Voltage
Result
3100(2)Pulse (300 µsec,
15% Duty Cycle)
10:1
at all Phase Angles
6.8 Peak
(3 dB Overdrive)
32No Device Degradation
1. The values shown are the center band performance numbers across the indicated frequency range.
2. Measured in 3100 MHz narrowband production test fixture.

Documentation

Quick reference to our documentation types.

5 documents

Design Resources

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Design Files

4 design files

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