MMRF1013H: 2700-2900 MHz, 320 W, 30 V Pulse S-Band RF Power MOSFETs

Overview

Features

NI-1230H-4S, NI-1230S-4S Package Image

NI-1230H-4S, NI-1230S-4S Package Image

Key Parametrics

  • Frequency (Min) (MHz)
    2700
  • Frequency (Max) (MHz)
    2900
  • Supply Voltage (Typ) (V)
    30
  • P1dB (Typ) (dBm)
    55.1
  • P1dB (Typ) (W)
    320
  • Output Power (Typ) (W) @ Intermodulation Level at Test Signal
    320.0 @ Peak
  • Test Signal
    Pulse
  • Power Gain (Typ) (dB) @ f (MHz)
    13.3 @ 2900
  • Efficiency (Typ) (%)
    50.5
  • Thermal Resistance (Spec) (℃/W)
    0.06
  • Matching
    unmatched
  • Class
    AB
  • Die Technology
    LDMOS
.

RF Performance Table

Typical Pulse Performance

Typical Pulse Performance: VDD = 30 Vdc, IDQ = 100 mA
  • Capable of Handling 10:1 VSWR @ 32 Vdc, 2900 MHz, 320 W Peak Power, 300 µsec, 10% Duty Cycle (3 dB Input Overdrive from Rated Pout)