AFT18S230-12N: 1805-1880 MHz, 50 W Avg., 28 V Airfast® RF Power LDMOS Transistor

Overview

Features

OM-780-2L2L Package Image

OM-780-2L2L Package Image

Key Parametrics

  • Frequency (Min) (MHz)
    1805
  • Frequency (Max) (MHz)
    1880
  • Supply Voltage (Typ) (V)
    28
  • P1dB (Typ) (dBm)
    53.1
  • P1dB (Typ) (W)
    204
  • Output Power (Typ) (W) @ Intermodulation Level at Test Signal
    50.0 @ AVG
  • Test Signal
    WCDMA
  • Power Gain (Typ) (dB) @ f (MHz)
    17.6 @ 1880
  • Efficiency (Typ) (%)
    33.8
  • Thermal Resistance (Spec) (℃/W)
    0.27
  • Matching
    input and output impedance matching
  • Class
    AB
  • Die Technology
    LDMOS
.

RF Performance Table

1800 MHz

Typical Single-Carrier W-CDMA Performance: VDD = 28 Vdc, IDQ = 1400 mA, Pout = 50 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
Frequency Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
IRL
(dB)
1805 MHz17.133.37.1–33.6–14
1840 MHz17.533.37.1–33.6–16
1880 MHz17.633.86.9–33.7–11