AFT20P060-4N: 1805-2170 MHz 6.3 W Avg., 28 V Airfast® RF Power LDMOS Transistors

Overview

Features

OM-780-4L, OM-780G-4L Package Image

OM-780-4L, OM-780G-4L Package Image

Key Parametrics

  • Frequency (Min) (MHz)
    1805
  • Frequency (Max) (MHz)
    2170
  • Supply Voltage (Typ) (V)
    28
  • P1dB (Typ) (dBm)
    47.8
  • P1dB (Typ) (W)
    60
  • Output Power (Typ) (W) @ Intermodulation Level at Test Signal
    6.3 @ AVG
  • Test Signal
    WCDMA
  • Power Gain (Typ) (dB) @ f (MHz)
    18.9 @ 2170
  • Efficiency (Typ) (%)
    20
  • Thermal Resistance (Spec) (℃/W)
    0.56
  • Matching
    input and output impedance matching
  • Class
    AB
  • Die Technology
    LDMOS
.

RF Performance Tables

2100 MHz

Typical Single-Carrier W-CDMA Performance: VDD = 28 Vdc, IDQ = 450 mA, Pout = 6.3 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.

1800 MHz

Typical Single-Carrier W-CDMA Performance: VDD = 28 Vdc, IDQ = 450 mA, Pout = 6.3 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.