A2T20H160W04N: 1880-2025 MHz, 28 W Avg., 28 V Airfast® RF Power LDMOS Transistor

Overview

Features

OM-780-4L Package Image

OM-780-4L Package Image

Key Parametrics

  • Frequency (Min) (MHz)
    1880
  • Frequency (Max) (MHz)
    2025
  • Supply Voltage (Typ) (V)
    28
  • P1dB (Typ) (dBm)
    49.5
  • P1dB (Typ) (W)
    90
  • P3dB (Typ) (dBm)
    53
  • P3dB (Typ) (W)
    200
  • Output Power (Typ) (W) @ Intermodulation Level at Test Signal
    28.0 @ AVG
  • Test Signal
    WCDMA
  • Power Gain (Typ) (dB) @ f (MHz)
    17.0 @ 1960
  • Efficiency (Typ) (%)
    47.7
  • Thermal Resistance (Spec) (℃/W)
    0.45
  • Matching
    input and output impedance matching
  • Class
    AB, C
  • Die Technology
    LDMOS
.

RF Performance Table

1880-2025 MHz

Typical Doherty single-carrier W-CDMA performance: VDD = 28 Vdc, IDQA = 400 mA, VGSB = 0.2 Vdc, Pout = 28 W Avg., input signal PAR = 9.9 dB @ 0.01% probability on CCDF.