A2G22S160-01S: 1800-2200 MHz, 32 W Avg., 48 V Airfast® RF Power GaN Transistor

Overview

Features

NI-400S-2S Package Image

NI-400S-2S Package Image

Key Parametrics

  • Frequency (Min) (MHz)
    1800
  • Frequency (Max) (MHz)
    2200
  • Supply Voltage (Typ) (V)
    48
  • P1dB (Typ) (dBm)
    51
  • P1dB (Typ) (W)
    125
  • P3dB (Typ) (dBm)
    52
  • P3dB (Typ) (W)
    160
  • Output Power (Typ) (W) @ Intermodulation Level at Test Signal
    32.0 @ AVG
  • Test Signal
    WCDMA
  • Power Gain (Typ) (dB) @ f (MHz)
    19.6 @ 2110
  • Efficiency (Typ) (%)
    38
  • Thermal Resistance (Spec) (℃/W)
    1.7
  • Matching
    input impedance matching
  • Class
    AB
  • Die Technology
    GaN
.

RF Performance Tables

2100 MHz

Typical Single-Carrier W-CDMA Performance: VDD = 48 Vdc, IDQ = 150 mA, Pout = 32 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.

1800 MHz

Typical Single-Carrier W-CDMA Performance: VDD = 48 Vdc, IDQ = 150 mA, Pout = 32 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.