MRF8P23080H: 2300-2400 MHz, 16 W Avg., 28 V W-CDMA, LTE RF Power LDMOS Transistors

Overview

Features

NI-780-4, NI-780S-4 Package Image

NI-780-4, NI-780S-4 Package Image

Key Parametrics

  • Frequency (Min) (MHz)
    2300
  • Frequency (Max) (MHz)
    2400
  • Supply Voltage (Typ) (V)
    28
  • P1dB (Typ) (dBm)
    47.4
  • P1dB (Typ) (W)
    55
  • Output Power (Typ) (W) @ Intermodulation Level at Test Signal
    16.0 @ AVG
  • Test Signal
    WCDMA
  • Power Gain (Typ) (dB) @ f (MHz)
    14.6 @ 2300
  • Efficiency (Typ) (%)
    42
  • Thermal Resistance (Spec) (℃/W)
    0.89
  • Matching
    input and output impedance matching
  • Class
    C, AB
  • Die Technology
    LDMOS
.

RF Performance Table

2300-2400 MHz

Typical Doherty Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQA = 280 mA, VGSB = 0.7 Vdc, Pout = 16 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.
Frequency Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
2300 MHz14.642.06.7–29.5
2350 MHz14.741.66.8–31.5
2400 MHz14.641.46.6–32.5
  • Capable of Handling 10:1 VSWR, @ 32 Vdc, 2350 MHz, 90 Watts CW Output Power (3 dB Input Overdrive from Rated Pout)
  • Typical Pout @ 3 dB Compression Point 100 Watts CW