AFT26P100-4WS: 2496-2690 MHz, 22 W Avg., 28 V Airfast® RF Power LDMOS Transistors

Overview

Features

NI-780S-4L, NI-780GS-4L

NI-780S-4L, NI-780GS-4L

Key Parametrics

  • Frequency (Min) (MHz)
    2496
  • Frequency (Max) (MHz)
    2690
  • Supply Voltage (Typ) (V)
    28
  • P1dB (Typ) (dBm)
    49.4
  • P1dB (Typ) (W)
    87
  • P3dB (Typ) (dBm)
    51
  • P3dB (Typ) (W)
    125
  • Output Power (Typ) (W) @ Intermodulation Level at Test Signal
    22.0 @ AVG
  • Test Signal
    WCDMA
  • Power Gain (Typ) (dB) @ f (MHz)
    15.3 @ 2690
  • Efficiency (Typ) (%)
    43.9
  • Thermal Resistance (Spec) (℃/W)
    0.6
  • Matching
    input and output impedance matching
  • Class
    C, AB
  • Die Technology
    LDMOS
.

RF Performance Table

2600 MHz

Typical Doherty Single-Carrier W-CDMA Characterization Performance: VDD = 28 Volts, VGSA = 0.4 Vdc, IDQB = 344 mA, Pout = 22 Watts Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.